 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| IRFP460A January 2002 IRFP460A 20A, 500V, 0.22 Ohm, N-Channel SMPS Power MOSFET Applications * Switch Mode Power Supplies (SMPS) * Uninterruptable Power Supply * High Speed Power Switching Features * Low Gate Charge Requirement * Improved Gate, Ruggedness * Improved rDS(ON) * Reduced Miller Capacitance Qg results in Simple Drive Avalanche and Dynamic dv/dt Package JEDEC TO-247 SOURCE DRAIN GATE DRAIN (FLANGE) G Symbol D S Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) Continuous (TC = 100oC, VGS = 10V) Pulsed1 Power dissipation Derate above 25oC Operating and Storage Temperature Soldering Temperature for 10 seconds Mounting Torque, 8-32 or M3 Screw Ratings 500 30 20 13 80 280 2.2 -55 to 150 300 (1.6mm from case) 10ibf*in (1.1N*m) Units V V A A A W W/oC oC oC ID PD TJ, TSTG Thermal Characteristics RJC RCS RJA Thermal Resistance Junction to Case Thermal Resistance Case to Sink, Flat, Greased Surface Thermal Resistance Junction to Ambient 0.45 0.24 TYP 40 oC/W oC/W oC/W (c)2002 Fairchild Semiconductor Corporation IRFP460A Rev. B January 2002 IRFP460A Package Marking and Ordering Information Device Marking IRFP460A Device IRFP460A Package TO-247 Reel Size Tape Width Quantity - Electrical Characteristics TJ = 25C (unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Units Statics BVDSS Drain to Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient rDS(ON) VGS(th) IDSS IGSS Drin to Source On-Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V V/C Reference to 25oC, ID = 1mA VGS = 10V, ID = 12A VDS = VGS, ID = 250A VDS = 25V TC =25oC VGS = 0V TC = 150oC VGS = 20V 500 2.0 0.61 0.17 3.3 0.22 4.0 25 250 100 V A nA V Dynamics gfs Qg(TOT) Qgs Qgd td(ON) tr td(OFF) tf CISS COSS CRSS Forward Transconductance Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 50V, ID = 12A VGS = 10V, VDS = 400V, ID = 20A VDD = 250V, ID = 20A RG = 4.3, RD = 13 VDS = 25V, VGS = 0V, f = 1MHz 11 56 13 17 13 8 41 6 3520 410 21 70 18 22 S nC nC nC ns ns ns ns pF pF pF Avalanche Characteristics EAS IAR EAR Single Pulse Avalanche Energy2 Avalanche Current Repetitive Avalanche Energy1 960 28 20 mJ A mJ Drain-Source Diode Characteristics IS ISM VSD trr QRR Notes: 1: 2: 3: 4: Repetitive rating; pulse width limited by maximum junction temperature VDD = 50V, Starting TJ = 25C, L = 7.0mH, RG = 25, IAS = 14A ISD Continuous Source Current (Body Diode) Pulsed Source Current1 (Body Diode) Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge MOSFET symbol showing the integral reverse p-n junction diode. D - 0.86 560 8.0 20 80 1.8 710 11 A A V ns C G S ISD = 20A ISD = 20A, dISD/dt = 100A/s ISD = 20A, dISD/dt = 100A/s (c)2002 Fairchild Semiconductor Corporation IRFP460A Rev. B January 2002 IRFP460A Typical Characteristics 100 ID, DRAIN TO SOURCE CURRENT (A) TJ = 25oC ID, DRAIN TO SOURCE CURRENT (A) 100 TJ = 150oC VGS DESCENDING 10V 7V 6V 5.5V 5V 4.5V 10 VGS DESCENDING 10V 7V 6V 5.5V 5V 4.5V 10 4.5V 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.0 1.0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 1.0 1.0 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 Figure 1. Output Characteristics 70 PULSE DURATION = 80s 60 ID , DRAIN CURRENT (A) 50 40 30 20 10 0 DUTY CYCLE = 0.5% MAX VDD = 50V TJ = 25oC rDS(ON), DRAIN TO SOURCE ON RESISTANCE (ohms) 0.5 Figure 2. Output Characteristics PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 0.4 0.3 TJ = 150oC 0.2 0.1 VGS = 10V, ID = 20A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 0 2 4 6 8 10 VGS , GATE TO SOURCE VOLTAGE (V) Figure 3. Transfer Characteristics Figure 4. Drain To Source On Resistance vs Junction Temperatrue 12 ID = 20A VGS , GATE TO SOURCE VOLTAGE (V) 10 100V 8 250V 8000 VGS = 0V, f = 1MHz C, CAPACITANCE (pF) 6000 4000 CISS 6 400V 4 COSS 2000 CRSS 2 0 0 10 20 30 40 50 60 70 80 90 100 0 0 10 20 30 40 50 60 70 Qg, GATE CHARGE (nC) VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 5. Capacitance vs Drain To Source Voltage Figure 6. Gate Charge Waveforms For Constant Gate Current (c)2002 Fairchild Semiconductor Corporation IRFP460A Rev. B January 2002 IRFP460A Typical Characteristics (Continued) 100 ISD , SOURCE TO DRAIN CURRENT (A) 1000 TC = 25oC 100s ID, DRAIN CURRENT (A) TJ = 150oC 10 TJ = 25oC 100 OPERATION IN THIS AREA LIMITED BY RDS(ON) 10 1ms 1 10ms 1.0 DC 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , SOURCE TO DRAIN VOLTAGE (V) 0.1 1.0 10 100 1000 VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Body Diode Forward Voltage vs Body Diode Current 20 Figure 8. Maximum Safe Operating Area 16 ID, DRAIN CURRENT (A) 12 8 4 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 9. Maximum Drain Current vs Case Temperature ZJC , NORMALIZED THERMAL RESPONSE 100 0.50 0.20 0.10 10-1 t1 0.05 0.02 PD t2 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC SINGLE PULSE 10-4 10-3 10-2 10-1 100 101 0.01 10-2 10-5 t1 , RECTANGULAR PULSE DURATION (s) Figure 10. Normalized Transient Thermal Impedance, Junction to Case (c)2002 Fairchild Semiconductor Corporation IRFP460A Rev. B January 2002 IRFP460A Test Circuits and Waveforms VDS tP L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG - BVDSS VDS VDD + VDD IAS 0.01 0 tAV Figure 11. Unclamped Energy Test Circuit Figure 12. Unclamped Energy Waveforms VDS RL VDD VDS Qg(TOT) VGS = 10V VGS Qg(5) VDD DUT Ig(REF) 0 VGS VGS = 1V Qg(TH) Qgs Ig(REF) 0 Qgd VGS = 5V + Figure 13. Gate Charge Test Circuit Figure 14. Gate Charge Waveforms VDS tON td(ON) RL VDS 90% tr tOFF td(OFF) tf 90% VGS + VDD DUT 0 10% 10% 90% VGS 50% PULSE WIDTH 50% RGS VGS 0 10% Figure 15. Switching Time Test Circuit Figure 16. Switching Time Waveform (c)2002 Fairchild Semiconductor Corporation IRFP460A Rev. B January 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
Price & Availability of IRFP460A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |